Sub-10 nm Feature Size PS-b-PDMS Block Copolymer Structures Fabricated by a Microwave-Assisted Solvothermal Process

被引:76
作者
Borah, Dipu [1 ,2 ,3 ]
Shaw, Matthew T. [1 ,2 ,3 ,4 ]
Holmes, Justin D. [1 ,2 ,3 ]
Morris, Michael A. [1 ,2 ,3 ]
机构
[1] Natl Univ Ireland Univ Coll Cork, Dept Chem, Mat Chem Sect, Cork, Ireland
[2] Trinity Coll Dublin, Coll Green, Ctr Adapt Nanostruct & Nanodevices CRANN, Dublin 2, Ireland
[3] Tyndall Natl Inst, Cork, Ireland
[4] Intel Ireland Ltd, Leixlip, Kildare, Ireland
基金
爱尔兰科学基金会;
关键词
polymer brush; block copolymer; silicon nitride substrate; solvothermal process; microwave anneal; self-assembly; graphoepitaxy; plasma etching; nanoscale patterns; THIN-FILMS; GRAPHOEPITAXY; PATTERNS; LIMITS; EXTENSION; ARRAYS;
D O I
10.1021/am302830w
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
Block copolymer (BCP) microphase separation at surfaces might enable the generation of substrate features in a scalable, manufacturable, bottom-up fashion provided that pattern structure, orientation, alignment can be strictly controlled. A further requirement is that self-assembly takes place within periods of the order of minutes so that continuous manufacturing processes do not require lengthy pretreatments and sample storage leading to contamination and large facility costs. We report here microwave-assisted solvothermal (in toluene environments) self-assembly and directed self-assembly of a very low molecular weight cylinder-forming polystyrene-block-polydimethylsiloxane (PS-b-PDMS) BCP on planar and patterned silicon nitride (Si3N4) substrates. Good pattern ordering was achieved in the order of minutes. Factors affecting BCP self-assembly, notably anneal time and temperature were studied and seen to have significant effects. Graphoepitaxy to direct self-assembly in the BCP yielded promising results producing BCP patterns with long-range translational alignment commensurate with the pitch period of the topographic patterns. This rapid BCP ordering method is consistent with the standard thermal/solvent anneal processes.
引用
收藏
页码:2004 / 2012
页数:9
相关论文
共 47 条
[1]  
[Anonymous], 2007, INT TECHN ROADM SEM
[2]   Block Copolymer Nanolithography: Translation of Molecular Level Control to Nanoscale Patterns [J].
Bang, Joona ;
Jeong, Unyong ;
Ryu, Du Yeol ;
Russell, Thomas P. ;
Hawker, Craig J. .
ADVANCED MATERIALS, 2009, 21 (47) :4769-4792
[3]   Graphoepitaxy of self-assembled block copolymers on two-dimensional periodic patterned templates [J].
Bita, Ion ;
Yang, Joel K. W. ;
Jung, Yeon Sik ;
Ross, Caroline A. ;
Thomas, Edwin L. ;
Berggren, Karl K. .
SCIENCE, 2008, 321 (5891) :939-943
[4]   Polymer self-assembly as a novel extension to optical lithography [J].
Black, Charles T. .
ACS NANO, 2007, 1 (03) :147-150
[5]   Plasma etch technologies for the development of ultra-small feature size transistor devices [J].
Borah, D. ;
Shaw, M. T. ;
Rasappa, S. ;
Farrell, R. A. ;
O'Mahony, C. ;
Faulkner, C. M. ;
Bosea, M. ;
Gleeson, P. ;
Holmes, J. D. ;
Morris, M. A. .
JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2011, 44 (17)
[6]   Room-temperature synthesis of α-SiO2 thin films by UV-assisted ozonolysis of a polymer precursor [J].
Brinkmann, M ;
Chan, VZH ;
Thomas, EL ;
Lee, VY ;
Miller, RD ;
Hadjichristidis, N ;
Avgeropoulos, A .
CHEMISTRY OF MATERIALS, 2001, 13 (03) :967-972
[7]   RESOLUTION LIMITS FOR ELECTRON-BEAM LITHOGRAPHY [J].
BROERS, AN .
IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1988, 32 (04) :502-513
[8]   Assembly of aligned linear metallic patterns on silicon [J].
Chai, Jinan ;
Wang, Dong ;
Fan, Xiangning ;
Buriak, Jillian M. .
NATURE NANOTECHNOLOGY, 2007, 2 (08) :500-506
[9]   Aligned Sub-10-nm Block Copolymer Patterns Templated by Post Arrays [J].
Chang, Jae-Byum ;
Son, Jeong Gon ;
Hannon, Adam F. ;
Alexander-Katz, Alfredo ;
Ross, Caroline A. ;
Berggren, Karl K. .
ACS NANO, 2012, 6 (03) :2071-2077
[10]  
Ebnesajjad S, 2000, FLUOROPLASTICS NONME, V1, P27