Extraction of trap densities at front and back interfaces in thin-film transistors

被引：19

作者：

Kimura, M ^{[1
]}

Tam, SWB

Inoue, S

Shimoda, T

机构：

[1] Ryukoku Univ, Dept Elect & Informat, Otsu, Shiga 5202194, Japan

[2] Cambridge Res Lab Epson, Cambridge CB4 0FE, England

[3] Seiko Epson Corp, Technol Platform Res Ctr, Nagano 3990293, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS | 2004年 / 43卷 / 01期

关键词：

extraction; trap density; front; back; interface; thin-film transistor; capacitance-voltage characteristic; polycrystalline silicon; laser crystallization;

D O I：

10.1143/JJAP.43.71

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A technique for extracting trap densities at front and back interfaces has been developed for thin-film transistors. This extraction technique utilizes front and back capacitance-voltage characteristics, Q=CV, the Poisson equation and carrier density equations. The validity of this extraction technique is confirmed using device simulation. Actual trap densities are extracted, and it is found that both trap densities have the same figure. Moreover, they include deep states and therefore seem to be caused by dangling bonds.

引用

页码：71 / 76

页数：6

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