THE ANNEALING EFFECTS OF EXCIMER-LASER-PRODUCED LARGE-GRAIN POLY-SI THIN-FILM TRANSISTORS

被引:10
作者
CHOI, DH
MATSUMURA, M
机构
[1] Department of Physical Electronics, Tokyo Institute of Technology, Oh-okayama, Meguro-ku, Tokyo
来源
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 1994年 / 33卷 / 1B期
关键词
THIN-FILM TRANSISTOR; EXCIMER-LASER CRYSTALLIZATION; POLYSILICON; POSTHYDROGENATION; ANNEALING; FIELD-EFFECT MOBILITY;
D O I
10.1143/JJAP.33.L83
中图分类号
O59 [应用物理学];
学科分类号
摘要
annealing effects have been studied for thin-film transistors (TFTs) with excimer-laser recrystallized large-grain poly-Si films. Electron field-effect mobility of about 350 cm(2)/V.s, i.e., much higher than the typical value, can be obtained by simple vacuum anneal. Effects of atomic hydrogen and molecular hydrogen anneals are also identified.
引用
收藏
页码:L83 / L86
页数:4
相关论文
共 13 条
[1]   HOT-WALL CHEMICAL-VAPOR-DEPOSITION OF AMORPHOUS-SILICON AND ITS APPLICATION TO THIN-FILM TRANSISTORS [J].
AHN, BC ;
SHIMIZU, K ;
SATOH, T ;
KANOH, H ;
SUGIURA, O ;
MATSUMURA, M .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1991, 30 (12B) :3695-3699
[2]   DRASTIC ENLARGEMENT OF GRAIN-SIZE OF EXCIMER-LASER-CRYSTALLIZED POLYSILICON FILMS [J].
CHOI, DH ;
SHIMIZU, K ;
SUGIURA, O ;
MATSUMURA, M .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1992, 31 (12B) :4545-4549
[3]  
CHOI DH, UNPUB JPN J APPL PHY
[4]   CHARACTERIZATION OF GLOW-DISCHARGE DEPOSITED A-SI-H [J].
FRITZSCHE, H .
SOLAR ENERGY MATERIALS, 1980, 3 (04) :447-501
[5]  
ISHIHARA R, 54TH AUT M JAP SOC A
[6]   ENLARGEMENT OF POLY-SI FILM GRAIN-SIZE BY EXCIMER LASER ANNEALING AND ITS APPLICATION TO HIGH-PERFORMANCE POLY-SI THIN-FILM TRANSISTOR [J].
KURIYAMA, H ;
KIYAMA, S ;
NOGUCHI, S ;
KUWAHARA, T ;
ISHIDA, S ;
NOHDA, T ;
SANO, K ;
IWATA, H ;
KAWATA, H ;
OSUMI, M ;
TSUDA, S ;
NAKANO, S ;
KUWANO, Y .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1991, 30 (12B) :3700-3703
[7]   EFFECTS OF GRAIN-BOUNDARIES ON LASER CRYSTALLIZED POLY-SI MOSFETS [J].
NG, KK ;
CELLER, GK ;
POVILONIS, EI ;
FRYE, RC ;
LEAMY, HJ ;
SZE, SM .
ELECTRON DEVICE LETTERS, 1981, 2 (12) :316-318
[8]  
NISHIMURA T, 1985, 17TH C SOL STAT DEV, P145
[9]   XECL EXCIMER LASER ANNEALING USED IN THE FABRICATION OF POLY-SI TFTS [J].
SAMESHIMA, T ;
USUI, S ;
SEKIYA, M .
IEEE ELECTRON DEVICE LETTERS, 1986, 7 (05) :276-278
[10]   OBSERVATION OF LASER-INDUCED MELTING OF SILICON FILM FOLLOWED BY AMORPHIZATION [J].
SAMESHIMA, T ;
HARA, M ;
SANO, N ;
USUI, S .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1990, 29 (08) :L1363-L1365