DRASTIC ENLARGEMENT OF GRAIN-SIZE OF EXCIMER-LASER-CRYSTALLIZED POLYSILICON FILMS

被引：43

作者：

CHOI, DH

SHIMIZU, K

SUGIURA, O

MATSUMURA, M

机构：

[1] Department of Physical Electronics, Tokyo Institute of Technology, Tokyo

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1992年 / 31卷 / 12B期

关键词：

EXCIMER-LASER CRYSTALLIZATION METHOD; POLYSILICON; GRAIN SIZE; THIN-FILM TRANSISTOR; SOLIDIFICATION VELOCITY; MEMBRANE;

D O I：

10.1143/JJAP.31.4545

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Polysilicon thin films with extremely large grains (grain size more than 50 Am, i.e., three orders of magnitude more than the typical value) have been formed using an excimer-laser crystallization method for the first time. This drastic enlargement was achieved by the reduction of the solidification rate of molten silicon by the small heat capacitance effect of the thin silicon-dioxide membrane used as a substrate. Crystallinity and film properties have been evaluated from Raman spectroscopy, resistivity, Hall effect and transistor characteristics. The Hall mobility of electrons was as high as 610 CM2/VS.

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收藏

页码：4545 / 4549

页数：5

相关论文

共 9 条

[1] HIGH-PERFORMANCE THIN-FILM TRANSISTORS IN LOW-TEMPERATURE CRYSTALLIZED LPCVD AMORPHOUS-SILICON FILMS [J].

HATALIS, MK ;

GREVE, DW .

IEEE ELECTRON DEVICE LETTERS, 1987, 8 (08) :361-364

[2] ENLARGEMENT OF POLY-SI FILM GRAIN-SIZE BY EXCIMER LASER ANNEALING AND ITS APPLICATION TO HIGH-PERFORMANCE POLY-SI THIN-FILM TRANSISTOR [J].

KURIYAMA, H ;

KIYAMA, S ;

NOGUCHI, S ;

KUWAHARA, T ;

ISHIDA, S ;

NOHDA, T ;

SANO, K ;

IWATA, H ;

KAWATA, H ;

OSUMI, M ;

TSUDA, S ;

NAKANO, S ;

KUWANO, Y .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1991, 30 (12B) :3700-3703

[3] HIGH-PERFORMANCE LOW-TEMPERATURE POLY-SI N-CHANNEL TFTS FOR LCD [J].

MIMURA, A ;

KONISHI, N ;

ONO, K ;

OHWADA, J ;

HOSOKAWA, Y ;

ONO, YA ;

SUZUKI, T ;

MIYATA, K ;

KAWAKAMI, H .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1989, 36 (02) :351-359

[4] UV PULSED LASER ANNEALING OF SI+ IMPLANTED SILICON FILM AND LOW-TEMPERATURE SUPER-THIN FILM TRANSISTORS [J].

MORITA, Y ;

NOGUCHI, T .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1989, 28 (02) :L309-L311

[5] OBSERVATION OF LASER-INDUCED MELTING OF SILICON FILM FOLLOWED BY AMORPHIZATION [J].

SAMESHIMA, T ;

HARA, M ;

SANO, N ;

USUI, S .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1990, 29 (08) :L1363-L1365

[6] HIGH-PERFORMANCE TFTS FABRICATED BY XECL EXCIMER LASER ANNEALING OF HYDROGENATED AMORPHOUS-SILICON FILM [J].

SERA, K ;

OKUMURA, F ;

UCHIDA, H ;

ITOH, S ;

KANEKO, S ;

HOTTA, K .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1989, 36 (12) :2868-2872

[7] LOW-TEMPERATURE FABRICATION OF HIGH-MOBILITY POLY-SI TFTS FOR LARGE-AREA LCDS [J].

SERIKAWA, T ;

SHIRAI, S ;

OKAMOTO, A ;

SUYAMA, S .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1989, 36 (09) :1929-1933

[8] HIGH-MOBILITY BOTTOM-GATE THIN-FILM TRANSISTORS WITH LASER-CRYSTALLIZED AND HYDROGEN-RADICAL-ANNEALED POLYSILICON FILMS [J].

SHIMIZU, K ;

HOSOYA, H ;

SUGIURA, O ;

MATSUMURA, M .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 1991, 30 (12B) :3704-3709

[9] CMOS CIRCUITS FOR PERIPHERAL CIRCUIT INTEGRATED POLY-SI TFT LCD FABRICATED AT LOW-TEMPERATURE BELOW 600-DEGREES-C [J].

TAKABATAKE, M ;

OHWADA, J ;

ONO, YA ;

ONO, K ;

MIMURA, A ;

KONISHI, N .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1991, 38 (06) :1303-1309