HIGH-MOBILITY BOTTOM-GATE THIN-FILM TRANSISTORS WITH LASER-CRYSTALLIZED AND HYDROGEN-RADICAL-ANNEALED POLYSILICON FILMS

被引：25

作者：

SHIMIZU, K

HOSOYA, H

SUGIURA, O

MATSUMURA, M

机构：

[1] Department of Physical Electronics, Tokyo Institute of Technology, Tokyo, 152, O-okayama, Meguro-ku

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS | 1991年 / 30卷 / 12B期

关键词：

BOTTOM-GATE THIN-FILM TRANSISTOR; POLYSILICON; LASER CRYSTALLIZATION; POSTHYDROGENATION; PHOTOGENERATED HYDROGEN-RADICAL ANNEALING;

D O I：

10.1143/JJAP.30.3704

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

High-performance bottom-gate thin-film transistors (TFTs) have been realized with excimer-laser-crystallized polysilicon films, for the first time. TFT characteristics were greatly dependent on the silicon film thickness as well as the pulsed-laser energy density. It was found also that posthydrogenation based on hydrogen-radical annealing improves the TFT characteristics drastically. The field-effect mobilities exceeded 220 cm2/Vs for electrons and 140 cm2/Vs for holes, respectively.

引用

页码：3704 / 3709

页数：6

共 13 条

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