HYDROGENATION KINETICS AND DEFECT TERMINATION OF POST-PLASMA-TREATED CHEMICAL-VAPOR-DEPOSITED AMORPHOUS-SILICON FILM

被引：26

作者：

NAKAMURA, M

OHNO, T

MIYATA, K

KONISHI, N

SUZUKI, T

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1989年 / 65卷 / 08期

关键词：

D O I：

10.1063/1.342699

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：3061 / 3068

页数：8

共 27 条

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