POST-HYDROGENATION OF THERMAL LPCVD A-SI FILMS

[1] GENERATION OF DANGLING BONDS BY HIGH-TEMPERATURE ANNEALING AND HOPPING CONDUCTION IN AMORPHOUS-SILICON FILMS [J]. SOLID STATE COMMUNICATIONS, 1980, 33 (10) : 1019 - 1023

[2] PHOTOCONDUCTIVITY OF EVAPORATED AMORPHOUS-SILICON FILMS POST-HYDROGENATED IN A THETA-PINCH PLASMA [J]. PHYSICAL REVIEW B, 1983, 27 (06) : 3562 - 3570

[3] HIROSE M, 1977, AMORPHOUS LIQUID SEM, P352

[4] THETA-PINCH PLASMA HYDROGENATION OF EVAPORATED AMORPHOUS-SILICON FILMS [J]. JOURNAL DE PHYSIQUE, 1981, 42 (NC4): : 639 - 642

[5] KAPLAN D, 1978, APPL PHYS LETT, V35, P440

[6] ELECTRONIC PROPERTIES OF SUBSTITUTED DOPED AMORPHOUS SI AND GE [J]. PHILOSOPHICAL MAGAZINE, 1976, 33 (06): : 935 - 949

[7] HYDROGEN IMPLANTATION INTO CVD AMORPHOUS-SILICON [J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1980, 19 : 91 - 94

[8] SUBSTITUTIONAL DOPING OF CHEMICALLY VAPOR-DEPOSITED AMORPHOUS SILICON [J]. JOURNAL OF CRYSTAL GROWTH, 1978, 45 (01) : 126 - 131

[9] HIGHLY STABLE, PHOTOSENSITIVE EVAPORATED AMORPHOUS-SILICON FILMS [J]. APPLIED PHYSICS LETTERS, 1981, 38 (10) : 789 - 790

[10] CHARACTERIZATION OF AMORPHOUS SEMICONDUCTING SILICON BORON ALLOYS PREPARED BY PLASMA DECOMPOSITION [J]. PHYSICAL REVIEW B, 1979, 19 (04): : 2041 - 2055

[1] GENERATION OF DANGLING BONDS BY HIGH-TEMPERATURE ANNEALING AND HOPPING CONDUCTION IN AMORPHOUS-SILICON FILMS [J]. SOLID STATE COMMUNICATIONS, 1980, 33 (10) : 1019 - 1023

[2] PHOTOCONDUCTIVITY OF EVAPORATED AMORPHOUS-SILICON FILMS POST-HYDROGENATED IN A THETA-PINCH PLASMA [J]. PHYSICAL REVIEW B, 1983, 27 (06) : 3562 - 3570

[3] HIROSE M, 1977, AMORPHOUS LIQUID SEM, P352

[4] THETA-PINCH PLASMA HYDROGENATION OF EVAPORATED AMORPHOUS-SILICON FILMS [J]. JOURNAL DE PHYSIQUE, 1981, 42 (NC4): : 639 - 642

[5] KAPLAN D, 1978, APPL PHYS LETT, V35, P440

[6] ELECTRONIC PROPERTIES OF SUBSTITUTED DOPED AMORPHOUS SI AND GE [J]. PHILOSOPHICAL MAGAZINE, 1976, 33 (06): : 935 - 949

[7] HYDROGEN IMPLANTATION INTO CVD AMORPHOUS-SILICON [J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1980, 19 : 91 - 94

[8] SUBSTITUTIONAL DOPING OF CHEMICALLY VAPOR-DEPOSITED AMORPHOUS SILICON [J]. JOURNAL OF CRYSTAL GROWTH, 1978, 45 (01) : 126 - 131

[9] HIGHLY STABLE, PHOTOSENSITIVE EVAPORATED AMORPHOUS-SILICON FILMS [J]. APPLIED PHYSICS LETTERS, 1981, 38 (10) : 789 - 790

[10] CHARACTERIZATION OF AMORPHOUS SEMICONDUCTING SILICON BORON ALLOYS PREPARED BY PLASMA DECOMPOSITION [J]. PHYSICAL REVIEW B, 1979, 19 (04): : 2041 - 2055