HYDROGEN IMPLANTATION INTO CVD AMORPHOUS-SILICON

被引:11
作者
SUZUKI, T [1 ]
HIROSE, M [1 ]
OSAKA, Y [1 ]
机构
[1] HIROSHIMA UNIV,DEPT ELECT ENGN,HIROSHIMA 730,JAPAN
关键词
D O I
10.7567/JJAPS.19S2.91
中图分类号
O59 [应用物理学];
学科分类号
摘要
引用
收藏
页码:91 / 94
页数:4
相关论文
共 16 条
  • [1] PHOTOCONDUCTIVITY AND RECOMBINATION IN DOPED AMORPHOUS SILICON
    ANDERSON, DA
    SPEAR, WE
    [J]. PHILOSOPHICAL MAGAZINE, 1977, 36 (03): : 695 - 712
  • [2] BRODSKY MH, 1977, PHYS REV B, V16, P3556, DOI 10.1103/PhysRevB.16.3556
  • [3] QUANTITATIVE-ANALYSIS OF HYDROGEN IN GLOW-DISCHARGE AMORPHOUS SILICON
    BRODSKY, MH
    FRISCH, MA
    ZIEGLER, JF
    LANFORD, WA
    [J]. APPLIED PHYSICS LETTERS, 1977, 30 (11) : 561 - 563
  • [4] DOPING AND ANNEALING EFFECTS ON ESR IN CHEMICALLY VAPOR-DEPOSITED AMORPHOUS SILICON
    HASEGAWA, S
    KASAJIMA, T
    SHIMIZU, T
    [J]. SOLID STATE COMMUNICATIONS, 1979, 29 (01) : 13 - 16
  • [5] DEFECT COMPENSATION IN DOPED CVD AMORPHOUS-SILICON
    HIROSE, M
    TANIGUCHI, M
    NAKASHITA, T
    OSAKA, Y
    SUZUKI, T
    HASEGAWA, S
    SHIMIZU, T
    [J]. JOURNAL OF NON-CRYSTALLINE SOLIDS, 1980, 35-6 (JAN-) : 297 - 302
  • [6] HIROSE M, 1979, 8TH P INT C AM LIQ S
  • [7] Loveland R. J., 1973, Journal of Non-Crystalline Solids, V13, P55, DOI 10.1016/0022-3093(73)90035-5
  • [8] SPUTTERED HYDROGENATED AMORPHOUS SILICON
    MOUSTAKAS, TD
    [J]. JOURNAL OF ELECTRONIC MATERIALS, 1979, 8 (03) : 391 - 435
  • [9] PREPARATION OF HIGHLY PHOTOCONDUCTIVE AMORPHOUS SILICON BY RF SPUTTERING
    MOUSTAKAS, TD
    ANDERSON, DA
    PAUL, W
    [J]. SOLID STATE COMMUNICATIONS, 1977, 23 (03) : 155 - 158
  • [10] ELECTRONIC DENSITY OF STATES IN CHEMICALLY VAPOR-DEPOSITED AMORPHOUS SILICON
    NAKASHITA, T
    HIROSE, M
    OSAKA, Y
    [J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1979, 18 (02) : 405 - 406