ON-CHIP BOTTOM-GATE POLYSILICON AND AMORPHOUS-SILICON THIN-FILM TRANSISTORS USING EXCIMER LASER ANNEALING

被引：35

作者：

SHIMIZU, K

SUGIURA, O

MATSUMURA, M

机构：

[1] Department of Physical Electronics, Tokyo Institute of Technology, Tokyo, 152, O-okayama, Meguro-ku

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 1990年 / 29卷 / 10期

关键词：

A-Si TFT; Active-matrix liquid crystal display; Bottom-gate TFT; CVD a-Si; Excimer laser annealing; Poty-Si TFT;

D O I：

10.1143/JJAP.29.L1775

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

High-performance bottom-gate thin-film transistors (TFTs) with both polysilicon (poly-Si) and amorphous silicon (a-Si) have been fabricated, for the first time, using chemical-vapor-deposited a-Si film as a starting semiconductor material. The feature of this technology is that both TFTs can be produced in the same process and at the same time on a single substrate except for the local laser crystallization step of the a-Si. The field-effect mobilities were 60 cm2/V ·s for the poly-Si TFT and 1.3 cm2/V ·s for the a-Si TFT, respectively. Their on-off current ratios were more than 106. © 1990 IOP Publishing Ltd.

引用

页码：L1775 / L1777

页数：3

共 6 条

[1] DEPOSITION AND PHOTOCONDUCTIVITY OF HYDROGENATED AMORPHOUS-SILICON FILMS BY THE PYROLYSIS OF DISILANE [J].