Long wavelength (1.3 and 1.5 μm) photoluminescence from InGaAs/GaPAsSb quantum wells grown on GaAs

被引：31

作者：

Dowd, P

Braun, W

Smith, DJ

Ryu, CM

Guo, CZ

Chen, SL

Koelle, U

Johnson, SR

Zhang, YH

机构：

[1] Arizona State Univ, Dept Elect Engn, Tempe, AZ 85287 USA

[2] Arizona State Univ, Ctr Solid State Elect Res, Tempe, AZ 85287 USA

来源：

APPLIED PHYSICS LETTERS | 1999年 / 75卷 / 09期

关键词：

D O I：

10.1063/1.124663

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Room temperature photoluminescence at wavelengths between 1.2 and 1.5 mu m has been observed in samples consisting of InGaAs/GaPAsSb quantum well structures grown on GaAs. The emission wavelength is varied primarily by changing the composition within the GaPAsSb layer. It is proposed that such long wavelength emission results from a spatially indirect interband transition in the type-II quantum wells where the electron and hole wave functions have large spatial overlap. (C) 1999 American Institute of Physics. [S0003-6951(99)00235-1].

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页码：1267 / 1269

页数：3

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