GaAsSbN: a new low-bandgap material for GaAs substrates

被引：92

作者：

Ungaro, G ^{[1
]}

Le Roux, G ^{[1
]}

Teissier, R ^{[1
]}

Harmand, JC ^{[1
]}

机构：

[1] France Telecom, CNET, Bagneux Lab, F-92225 Bagneux, France

来源：

ELECTRONICS LETTERS | 1999年 / 35卷 / 15期

关键词：

Energy gap - Light sources - Molecular beam epitaxy - Nitrogen - Photoluminescence - Plasma sources - Semiconducting antimony - Semiconducting gallium arsenide - Semiconductor quantum wells - Substrates;

D O I：

10.1049/el:19990864

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A new low-bandgap III-V compound grown on GaAs (GaAsSbN) has been investigated. Strained quantum wells were realised by molecular beam epitaxy with a nitrogen plasma source. The influence of Sb content on the level of nitrogen incorporation has been examined and no strong dependence was found. This material offers an interesting alternative to InGaAsN for developing 1.3 and 1.55 mu m laser sources on GaAs substrates: a GaAs0.729Sb0.259N0.012/GaAs quantum well has exhibited a room-temperature photoluminescence peak wavelength as long as 1.52 mu m. This emission is shifted to 1.3 mu m after post-growth annealing.

引用

页码：1246 / 1248

页数：3

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