Modeling of the CoolMOS™ transistor -: Part II:: DC model and parameter extraction

被引：15

作者：

Daniel, BJ ^{[1
]}

Parikh, CD ^{[1
]}

Patil, MB ^{[1
]}

机构：

[1] Indian Inst Technol, Dept Elect Engn, Bombay 400076, Maharashtra, India

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 2002年 / 49卷 / 05期

关键词：

CoolMOS model; CoolMOS parameter extraction; power MOSFET model;

D O I：

10.1109/16.998604

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

An accurate dc model for the CoolMOS(TM) power transistor is presented. An elementary model consisting of an intrinsic MOSFET and a JFET to represent the drift region, is first discussed and it is pointed out that this is a rather poor model, needing improvements. Using device simulation results, it is shown that, by replacing the gate and drain voltages of the intrinsic MOSFET by appropriate "effective" voltages, a highly accurate model is obtained. A systematic procedure for parameter extraction is described and an implementation of the new model in the form of a SPICE subcircuit is given.

引用

页码：923 / 929

页数：7

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