Insulator at the ultrathin limit: MgO on Ag(001)

被引：286

作者：

Schintke, S ^{[1
]}

Messerli, S

Pivetta, M

Patthey, F

Libioulle, L

Stengel, M

De Vita, A

Schneider, WD

机构：

[1] Univ Lausanne, Inst Phys Mat Condensee, CH-1015 Lausanne, Switzerland

[2] PHH Ecublens, Inst Romand Rech Numer Phys Mat, CH-1015 Lausanne, Switzerland

[3] Univ Trieste, INFM, I-34127 Trieste, Italy

[4] Univ Trieste, Dipartimento Ingn Mat, I-34127 Trieste, Italy

来源：

PHYSICAL REVIEW LETTERS | 2001年 / 87卷 / 27期

关键词：

D O I：

10.1103/PhysRevLett.87.276801

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

The electronic structure and morphology of ultrathin MgO films epitaxially grown on Ag(001) were investigated using low-temperature scanning tunneling spectroscopy and scanning tunneling microscopy. Layer-resolved differential conductance (dI/dU) measurements reveal that, even at a film thickness of three monolayers, a band gap of about 6 eV is formed corresponding to that of the MgO(001) single-crystal surface. This finding is confirmed by layer-resolved calculations of the local density of states based on density functional theory.

引用

页码：276801 / 276801

页数：4

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