Microwave properties of silicon junction tunnel diodes grown by molecular beam epitaxy

被引：18

作者：

Dashiell, MW ^{[1
]}

Kolodzey, J

Crozat, P

Aniel, F

Lourtioz, JM

机构：

[1] Univ Delaware, Dept Elect & Comp Engn, Newark, DE 19716 USA

[2] Univ Paris 11, Inst Elect Fondamental, F-91405 Orsay, France

来源：

IEEE ELECTRON DEVICE LETTERS | 2002年 / 23卷 / 06期

基金：

美国国家科学基金会;

关键词：

microwave measurements; molecular beam epitaxial growth; silicon; tunnel diodes;

D O I：

10.1109/LED.2002.1004234

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The bias dependence of the single-port microwave reflection gain of 15 mum-diameter Si Esaki tunnel diodes, grown by molecular beam epitaxy, was studied as a function of frequency. A simple equivalent circuit accurately modeled the data and yielded the forward-bias junction capacitance, which cannot be obtained by conventional low frequency capacitance-voltage techniques. The diodes were highly-doped step p-i-n junctions and exhibited a peak current density of 16 kA/cm(2). The microwave reflection gain and cutoff frequency were 12 dB and 1.6 GHz, respectively, with a speed index (slew rate) of 7.1 V/ns.

引用

页码：357 / 359

页数：3

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