High performance Si/Si1-xGex resonant tunneling diodes

被引：49

作者：

See, P ^{[1
]}

Paul, DJ

Holländer, B

Mantl, S

Zozoulenko, IV

Berggren, KF

机构：

[1] Univ Cambridge, Cavendish Lab, Cambridge CB3 0HE, England

[2] Forschungszentrum Julich, Inst Schicht & Ionentech, D-52425 Julich, Germany

[3] Linkoping Univ, Dept Phys & Measurement Sci, S-58183 Linkoping, Sweden

来源：

IEEE ELECTRON DEVICE LETTERS | 2001年 / 22卷 / 04期

关键词：

germanium; resonant tunneling diodes; silicon; strain;

D O I：

10.1109/55.915607

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Resonant tunneling diodes (RTDs) with strained i-Si0.4Ge0.6 potential barriers and a strained i-Si quantum well, all on a relaxed Si0.8Ge0.2 virtual substrate were successfully grown by ultra high vacuum compatible chemical vapor deposition and fabricated using standard Si processing methods. A large peak to valley current ratio of 2.9 and a peak current density of 4.3 kA/cm(2) at room temperature were recorded from pulsed and continuous dc current-voltage measurements, the highest reported values to date for Si/Si1-xGex RTDs. These de figures of merit and material system render such structures suitable and highly compatible with present high speed and low power Si/Si1-xGex heterojunction field effect transistor based integrated circuits.

引用

页码：182 / 184

页数：3

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