Epitaxially grown Si/SiGe interband tunneling diodes with high room-temperature peak-to-valley ratio

被引：38

作者：

Duschl, R ^{[1
]}

Schmidt, OG ^{[1
]}

Eberl, K ^{[1
]}

机构：

[1] Max Planck Inst Festkorperforsch, D-70569 Stuttgart, Germany

来源：

APPLIED PHYSICS LETTERS | 2000年 / 76卷 / 07期

关键词：

D O I：

10.1063/1.125616

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Room-temperature current-voltage characteristics of Si/Si1-xGex/Si p(+)-i-n(+) interband tunneling diodes are presented. Special attention is paid to the peak current density (PCD) and the peak-to-valley current ratio (PVCR) of the devices. A variation of the SiGe layer width between 4 and 2 nm changes the PCD from 0.4 to 12.6 kA/cm(2), at the same time conserving a PVCR of more than 4.1. The optimization of the Ge concentration x in the Si1-xGex layer results in a PVCR of 5.1 for x=48%. Tuning the position of the Si0.52Ge0.48 layer within the intrinsic zone culminates in a structure with a PCD of 8 kA/cm(2) and improves the PVCR to the value of 5.45. (C) 2000 American Institute of Physics. [S0003-6951(00)02407-4].

引用

页码：879 / 881

页数：3

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