ZnO Nanowire Field-Effect Transistors

被引：52

作者：

Chang, Pai-Chun

Lu, Jia Grace ^{[1
]}

机构：

[1] Univ So Calif, Dept Phys & Astron, Los Angeles, CA 90089 USA

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 2008年 / 55卷 / 11期

关键词：

Electrical conduction; field-effect transistor (FET); nanowire; ZnO;

D O I：

10.1109/TED.2008.2005181

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Owing to the extraordinary properties and prominent applications in emerging nanoelectronics, ZnO nanowire has attracted tremendous research effort. This paper provides an introductory overview, covering topics ranging from basic nanowire synthesis and fundamental electrical properties to device characteristics based on field-effect transistor configuration.

引用

收藏

页码：2977 / 2987

页数：11

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