p-type conducting ZnO:P microwires prepared by direct carbothermal growth

被引：50

作者：

Cao, B. Q. ^{[1
]}

Lorenz, M. ^{[1
]}

Brandt, M. ^{[1
]}

von Wenckstern, H. ^{[1
]}

Lenzner, J. ^{[1
]}

Biehne, G. ^{[1
]}

Grundmann, M. ^{[1
]}

机构：

[1] Univ Leipzig, Inst Expt Phys 2, D-04103 Leipzig, Germany

来源：

PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS | 2008年 / 2卷 / 01期

关键词：

D O I：

10.1002/pssr.200701268

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Phosphorous-doped (ZnO:P) and undoped ZnO wires with diameter of several micrometers and length of several hundred micrometers were thermally grown directly on phosphorus pentoxide doped and undoped ZnO:graphite targets, respectively. The cathodoluminescence spectra of single ZnO:P microwires show three typical acceptor-related emissions which are attributed to (A(0), X), (e, A(0)), and DAP. Three-terminal, gate voltage dependent electrical measurements of back-gate field effect transistors with the microwires as channels indicate reproducibly that undoped ZnO and ZnO:P microwires are n-type and p-type conductive, respectively. The p-type conductivity was found to be stable over more than six months. (C) 2008 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

引用

页码：37 / 39

页数：3

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