Phosphorus acceptor doped ZnO nanowires prepared by pulsed-laser deposition

被引：115

作者：

Cao, B. Q.

Lorenz, M.

Rahm, A.

von Wenckstern, H.

Czekalla, C.

Lenzner, J.

Benndorf, G.

Grundmann, M.

机构：

[1] Univ Leipzig, Inst Expt Phys 2, D-04108 Leipzig, Germany

[2] Solar AG, Leipzig, Germany

来源：

NANOTECHNOLOGY | 2007年 / 18卷 / 45期

关键词：

D O I：

10.1088/0957-4484/18/45/455707

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Phosphorus-doped ZnO (ZnO: P) nanowires were successfully prepared by a novel high-pressure pulsed- laser deposition process using phosphorus pentoxide as the dopant source. Detailed cathodoluminescence studies of single ZnO: P nanowires revealed characteristic phosphorus acceptor-related peaks: neutral acceptor-bound exciton emission (A(0), X, 3.356 eV), free-to-neutral-acceptor emission (e, A(0), 3.314 eV), and donor-to-acceptor pair emission (DAP, similar to 3.24 and similar to 3.04 eV). This means that stable acceptor levels with a binding energy of about 122 meV have been induced in the nanowires by phosphorus doping. Moreover, the induced acceptors are distributed homogeneously along the doped nanowires.

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页数：5

相关论文

共 25 条

[1] Properties of p-type and n-type ZnO influenced by P concentration [J].

Hu, Guangxia ;

Gong, Hao ;

Chor, E. F. ;

Wu, Ping .

APPLIED PHYSICS LETTERS, 2006, 89 (25)

[2] Study of the photoluminescence of phosphorus-doped p-type ZnO thin films grown by radio-frequency magnetron sputtering -: art. no. 151917 [J].

Hwang, DK ;

Kim, HS ;

Lim, JH ;

Oh, JY ;

Yang, JH ;

Park, SJ ;

Kim, KK ;

Look, DC ;

Park, YS .

APPLIED PHYSICS LETTERS, 2005, 86 (15) :1-3

[3] Optical characteristics of arsenic-doped ZnO nanowires [J].

Lee, W ;

Jeong, MC ;

Myoung, JM .

APPLIED PHYSICS LETTERS, 2004, 85 (25) :6167-6169

[4] Nanowire electronic and optoelectronic devices [J].

Li, Yat ;

Qian, Fang ;

Xiang, Jie ;

Lieber, Charles M. .

MATERIALS TODAY, 2006, 9 (10) :18-27

[5] Synthesis and optoelectronic properties of arrayed p-type ZnO nanorods grown on ZnO film/Si wafer in aqueous solutions [J].

Lin, CC ;

Chen, HP ;

Chen, SY .

CHEMICAL PHYSICS LETTERS, 2005, 404 (1-3) :30-34

[6] Electrical properties of zinc oxide nanowires and intramolecular p-n junctions [J].

Liu, CH ;

Yiu, WC ;

Au, FCK ;

Ding, JX ;

Lee, CS ;

Lee, ST .

APPLIED PHYSICS LETTERS, 2003, 83 (15) :3168-3170

[7] Electrical and optical properties of p-type ZnO [J].

Look, DC .

SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2005, 20 (04) :S55-S61

[8] MgxZn1-xO (0≤x<0.2) nanowire arrays on sapphire grown by high-pressure pulsed-laser deposition -: art. no. 143113 [J].

Lorenz, M ;

Kaidashev, EM ;

Rahm, A ;

Nobis, T ;

Lenzner, J ;

Wagner, G ;

Spemann, D ;

Hochmuth, H ;

Grundmann, M .

APPLIED PHYSICS LETTERS, 2005, 86 (14) :1-3

[9]

Lorenz M, 2008, SPRINGER SER MATER S, V104, P303

[10] Bound exciton and donor-acceptor pair recombinations in ZnO [J].

Meyer, BK ;

Alves, H ;

Hofmann, DM ;

Kriegseis, W ;

Forster, D ;

Bertram, F ;

Christen, J ;

Hoffmann, A ;

Strassburg, M ;

Dworzak, M ;

Haboeck, U ;

Rodina, AV .

PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, 2004, 241 (02) :231-260