Properties of p-type and n-type ZnO influenced by P concentration

被引：51

作者：

Hu, Guangxia

Gong, Hao

Chor, E. F.

Wu, Ping

机构：

[1] Natl Univ Singapore, Dept Mat Sci & Engn, Singapore 119260, Singapore

[2] Natl Univ Singapore, Dept Elect & Comp Engn, Singapore 119260, Singapore

[3] Inst High Performance Comp, Singapore 117525, Singapore

来源：

APPLIED PHYSICS LETTERS | 2006年 / 89卷 / 25期

关键词：

D O I：

10.1063/1.2408652

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The electrical conductivity of P-doped ZnO can be controlled by changing the P-doping concentration. With increasing P concentration, ZnO can be changed from n type to p type. At the same time, a redshift of the band gap energy is observed by using the photoluminescence spectroscopy and UV-visible spectrophotometer. X-ray diffraction results show that lattice spacings of ZnO increase with P concentration, which indicates that P substitutes O, and this leads to a lattice spacing increase and an optical band gap energy decrease. (c) 2006 American Institute of Physics.

引用

页数：3

共 29 条

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