Transparent indium zinc oxide ohmic contact to phosphor-doped n-type zinc oxide

被引：47

作者：

Hu, GX

Kumar, B

Gong, H

Chor, EF

Wu, P

机构：

[1] Natl Univ Singapore, Dept Mat Sci & Engn, Singapore 119260, Singapore

[2] Natl Univ Singapore, Dept Elect Engn, Singapore 119260, Singapore

[3] Inst High Performance Comp, Singapore 117528, Singapore

来源：

APPLIED PHYSICS LETTERS | 2006年 / 88卷 / 10期

关键词：

D O I：

10.1063/1.2178404

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Transparent indium zinc oxide (IZO) ohmic contacts to phosphor-doped n-type ZnO have been formed. The resistance, transmittance, and phase reliability of the contacts were investigated. As deposited, an ohmic contact was formed with a specific contact resistance of about 1.1x10(-4) Omega cm(2) and the transmittance of the ZnO/IZO (520/350 nm) film was more than 75% in the 450-1100 nm wavelength range. After annealing at 400 degrees C for 5 min in a vacuum (2x10(-5) mbar), the specific contact resistance was reduced by about two orders of magnitude to 3.8x10(-6) Omega cm(2), while maintaining the contact stability and high optical transparency. (c) 2006 American Institute of Physics.

引用

页数：3

共 28 条

[1] Effects of annealing on photoluminescence of ZnO thin film prepared by vapor phase growth [J].