Evaluation of advanced epoxy novolac resist, EPR, for sub 100nm synchrotron x-ray proximity lithography

被引:2
作者
Seo, Y
Lee, K
Yi, M
Seo, E
Choi, BK
Kim, O
Raptis, I
Argitis, P
Hatzakis, M
机构
[1] Dept. of Electron. and Elec. E., POSTECH, Postech Advanced Lithography Center, Kyungbuk 790-784
[2] NCSR Demokritos, Institute of Microelectronics, Attiki
关键词
D O I
10.1016/S0167-9317(99)00040-4
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
The performances of the advanced cresol epoxy novolac-based resist, EPR, were characterized for use of synchrotron x-ray proximity lithography at PALC(Postech Advanced Lithography Center). Although the high sensitivity and resolution capability of the EPR in e-beam lithography had been reported [1], its performances in the x-ray lithography have not been well investigated yet. We compared EPR to TDUR-N908 [2] of TOK, which is commercially available high sensitive negative tone resist used in x-ray lithography. The Experiments showed about 8 times higher sensitivity of EPR than that of TDUR-N908. The fine-line resolution capability of EPR was proven down to double spaced 80 nm dense lines. The contrast of EPR depends more on FEB temperature within the ranges of 90 degrees C similar to 100 degrees C rather than PAB temperature of 130 degrees C similar to 150 degrees C. But the sensitivity was not much changed by those variations of FEB and PAB temperature. In addition, we optimized the resist process of EPR for sub 100 nm regime in this work.
引用
收藏
页码:461 / 464
页数:4
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