Ordering of Ge quantum dots with buried Si dislocation networks

被引:66
作者
Leroy, F
Eymery, J
Gentile, P
Fournel, F
机构
[1] CEA, DRFMC, F-38054 Grenoble 9, France
[2] CEA, DTS, STME, F-38054 Grenoble, France
关键词
Nanocrystals - Silicon wafers - Semiconductor quantum dots;
D O I
10.1063/1.1474601
中图分类号
O59 [应用物理学];
学科分类号
摘要
Buried dislocation networks obtained by Si(001) wafer bonding pattern the free surface of the sample, giving rise to long-range undulations and short-range embossing, respectively, for flexion and rotation misalignement. Comparison with continuum-elasticity calculations reveals that this patterning is enhanced by strain-driven overetching. These surfaces are a template for growth, and we show that Ge quantum dots can be ordered with a fourfold symmetry by proceeding a postgrowth annealing. (C) 2002 American Institute of Physics.
引用
收藏
页码:3078 / 3080
页数:3
相关论文
共 14 条
[1]   How to control the self-organization of nanoparticles by bonded thin layers [J].
Bourret, A .
SURFACE SCIENCE, 1999, 432 (1-2) :37-53
[2]  
BRUEL M, Patent No. 9905711
[3]  
EYMERY J, 2001, MATER RES SOC S P, V673, P6
[4]   Accurate control of the misorientation angles in direct wafer bonding [J].
Fournel, F ;
Moriceau, H ;
Aspar, B ;
Rousseau, K ;
Eymery, J ;
Rouvière, JL ;
Magnea, N .
APPLIED PHYSICS LETTERS, 2002, 80 (05) :793-795
[5]  
FOURNEL F, 2000, MRS FALL M BOST
[6]  
Hirth JP., 1982, Theory of Dislocations
[7]   Self-assembly of two-dimensional islands via strain-mediated coarsening [J].
Liu, F ;
Li, AH ;
Lagally, MG .
PHYSICAL REVIEW LETTERS, 2001, 87 (12) :126103/1-126103/4
[8]   Shape transition of germanium nanocrystals on a silicon (001) surface from pyramids to domes [J].
Medeiros-Ribeiro, G ;
Bratkovski, AM ;
Kamins, TI ;
Ohlberg, DAA ;
Williams, RS .
SCIENCE, 1998, 279 (5349) :353-355
[9]   Lateral ordering of quantum dots by periodic subsurface stressors [J].
Romanov, AE ;
Petroff, PM ;
Speck, JS .
APPLIED PHYSICS LETTERS, 1999, 74 (16) :2280-2282