Growth processes and phase transformations studied by in situ transmission electron microscopy

被引:48
作者
Ross, FM
机构
关键词
D O I
10.1147/rd.444.0489
中图分类号
TP3 [计算技术、计算机技术];
学科分类号
0812 ;
摘要
In situ transmission electron microscopy allows us to study growth processes and phase transitions which are important in semiconductor processing. It provides a unique view of dynamic reactions as they occur. In this paper we describe the use of in situ microscopy for the observation of reactions in silicides and the formation of semiconductor "quantum dots.'" The dynamic information obtained from these experiments enables us to understand reaction mechanisms and to suggest improvements to growth and processing techniques. We conclude with a discussion of the use of in situ microscopy for studying reactions such as electrodeposition which occur at liquid/solid interfaces.
引用
收藏
页码:489 / 501
页数:13
相关论文
共 38 条
[1]  
ANDERSON R, 1990, MAT RES SOC P, V199
[2]  
Barabasi AL, 1997, APPL PHYS LETT, V70, P2565, DOI 10.1063/1.118920
[3]   Low temperature formation of C54-TiSi2 using titanium alloys [J].
Cabral, C ;
Clevenger, LA ;
Harper, JME ;
dHeurle, FM ;
Roy, RA ;
Lavoie, C ;
Saenger, KL ;
Miles, GL ;
Mann, RW ;
Nakos, JS .
APPLIED PHYSICS LETTERS, 1997, 71 (24) :3531-3533
[4]   New insights into the kinetics of the stress-driven two-dimensional to three-dimensional transition [J].
Chen, KM ;
Jesson, DE ;
Pennycook, SJ ;
Thundat, T ;
Warmack, RJ .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1996, 14 (03) :2199-2202
[5]   Structural transition in large-lattice-mismatch heteroepitaxy [J].
Chen, Y ;
Washburn, J .
PHYSICAL REVIEW LETTERS, 1996, 77 (19) :4046-4049
[6]   Dislocation-free island formation in heteroepitaxial growth: A study at equilibrium [J].
Daruka, I ;
Barabasi, AL .
PHYSICAL REVIEW LETTERS, 1997, 79 (19) :3708-3711
[7]   Diffusional narrowing of Ge on Si(100) coherent island quantum dot size distributions [J].
Drucker, J ;
Chaparro, S .
APPLIED PHYSICS LETTERS, 1997, 71 (05) :614-616
[8]   DISLOCATION-FREE STRANSKI-KRASTANOW GROWTH OF GE ON SI(100) [J].
EAGLESHAM, DJ ;
CERULLO, M .
PHYSICAL REVIEW LETTERS, 1990, 64 (16) :1943-1946
[9]   Lattice engineered compliant substrate for defect-free heteroepitaxial growth [J].
Ejeckam, FE ;
Lo, YH ;
Subramanian, S ;
Hou, HQ ;
Hammons, BE .
APPLIED PHYSICS LETTERS, 1997, 70 (13) :1685-1687
[10]   IN-SITU SEM OBSERVATIONS OF ELECTROMIGRATION VOIDS IN AL LINES UNDER PASSIVATION [J].
FLINN, PA ;
MADDEN, MC ;
MARIEB, TN .
MRS BULLETIN, 1994, 19 (06) :51-55