Observation of spin-polarized photoconductivity in (Ga, Mn) As/GaAs heterojunction without magnetic field

被引：33

作者：

Wu, Qing ^{[1
,2
]}

Liu, Yu ^{[1
,2
]}

Wang, Hailong ^{[2
,3
]}

Li, Yuan ^{[1
,2
]}

Huang, Wei ^{[1
,2
]}

Zhao, Jianhua ^{[2
,3
]}

Chen, Yonghai ^{[1
,2
]}

机构：

[1] Chinese Acad Sci, Beijing Key Lab Low Dimens Semicond Mat & Devices, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China

[2] Univ Chinese Acad Sci, Beijing 100083, Peoples R China

[3] Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, Beijing 100083, Peoples R China

来源：

SCIENTIFIC REPORTS | 2017年 / 7卷

基金：

中国国家自然科学基金;

关键词：

TUNNELING MAGNETORESISTANCE; DEPENDENCE; INJECTION;

D O I：

10.1038/srep40558

中图分类号：

O [数理科学和化学]; P [天文学、地球科学]; Q [生物科学]; N [自然科学总论];

学科分类号：

07 ; 0710 ; 09 ;

摘要：

In the absent of magnetic field, we have observed the anisotropic spin polarization degree of photoconduction (SPD-PC) in (Ga, Mn) As/GaAs heterojunction. We think three kinds of mechanisms contribute to the magnetic related signal, (i) (Ga, Mn) As self-producing due to the valence band polarization, (ii) unequal intensity of left and right circularly polarized light reaching to GaAs layer to excite unequal spin polarized carriers in GaAs layer, and (iii) (Ga, Mn) As as the spin filter layer for spin transport from GaAs to (Ga, Mn) As. Different from the previous experiments, the influence coming from the Zeeman splitting induced by an external magnetic field can be avoided here. While temperature dependence experiment indicates that the SPD-PC is mixed with the magnetic uncorrelated signals, which may come from current induced spin polarization.

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页数：8

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共 30 条

[1] Theory of magnetic anisotropy in III1-xMnxV ferromagnets -: art. no. 054418 [J].

Abolfath, M ;

Jungwirth, T ;

Brum, J ;

MacDonald, AH .

PHYSICAL REVIEW B, 2001, 63 (05)

[2] Interlayer exchange in (Ga,Mn)As/(Al,Ga)As/(Ga,Mn)As semiconducting ferromagnet/nonmagnet/ferromagnet trilayer structures [J].

Akiba, N ;

Matsukura, F ;

Shen, A ;

Ohno, Y ;

Ohno, H ;

Oiwa, A ;

Katsumoto, S ;

Iye, Y .

APPLIED PHYSICS LETTERS, 1998, 73 (15) :2122-2124

[3] Origin of the anomalous magnetic circular dichroism spectral shape in ferromagnetic Ga1-xMnxAs:: Impurity bands inside the band gap [J].

Ando, K. ;

Saito, H. ;

Agarwal, K. C. ;

Debnath, M. C. ;

Zayets, V. .

PHYSICAL REVIEW LETTERS, 2008, 100 (06)

[4] Origin of Magnetic Circular Dichroism in GaMnAs: Giant Zeeman Splitting versus Spin Dependent Density of States [J].

Berciu, M. ;

Chakarvorty, R. ;

Zhou, Y. Y. ;

Alam, M. T. ;

Traudt, K. ;

Jakiela, R. ;

Barcz, A. ;

Wojtowicz, T. ;

Liu, X. ;

Furdyna, J. K. ;

Dobrowolska, M. .

PHYSICAL REVIEW LETTERS, 2009, 102 (24)

[5] Magnetic circular dichroism studies of carrier-induced ferromagnetism in (Ga1-xMnx)As [J].

Beschoten, B ;

Crowell, PA ;

Malajovich, I ;

Awschalom, DD ;

Matsukura, F ;

Shen, A ;

Ohno, H .

PHYSICAL REVIEW LETTERS, 1999, 83 (15) :3073-3076

[6] Generation and control of spin-polarized photocurrents in GaMnAs heterostructures [J].

Bezerra, Anibal T. ;

Castelano, Leonardo K. ;

Degani, Marcos H. ;

Maialle, Marcelo Z. ;

Farinas, Paulo F. ;

Studart, Nelson .

APPLIED PHYSICS LETTERS, 2014, 104 (02)

[7] CONCENTRATION-DEPENDENCE OF ABSORPTION-COEFFICIENT FOR N-TYPE AND P-TYPE GAAS BETWEEN 1.3 AND 1.6 EV [J].

CASEY, HC ;

SELL, DD ;

WECHT, KW .

JOURNAL OF APPLIED PHYSICS, 1975, 46 (01) :250-257

[8] Common origin of ferromagnetism and band edge Zeeman splitting in GaMnAs at low Mn concentrations [J].

Chakarvorty, R. ;

Shen, S. ;

Yee, K. J. ;

Wojtowicz, T. ;

Jakiela, R. ;

Barcz, A. ;

Liu, X. ;

Furdyna, J. K. ;

Dobrowolska, M. .

APPLIED PHYSICS LETTERS, 2007, 91 (17)

[9] Low-temperature magnetotransport behaviors of heavily Mn-doped (Ga,Mn)As films with high ferromagnetic transition temperature [J].

Chen, L. ;

Yan, S. ;

Xu, P. F. ;

Lu, J. ;

Wang, W. Z. ;

Deng, J. J. ;

Qian, X. ;

Ji, Y. ;

Zhao, J. H. .

APPLIED PHYSICS LETTERS, 2009, 95 (18)

[10] Enhancing the Curie Temperature of Ferromagnetic Semiconductor (Ga,Mn)As to 200 K via Nanostructure Engineering [J].

Chen, Lin ;

Yang, Xiang ;

Yang, Fuhua ;

Zhao, Jianhua ;

Misuraca, Jennifer ;

Xiong, Peng ;

von Molnar, Stephan .

NANO LETTERS, 2011, 11 (07) :2584-2589