Enhancing the Curie Temperature of Ferromagnetic Semiconductor (Ga,Mn)As to 200 K via Nanostructure Engineering

被引：296

作者：

Chen, Lin ^{[1
]}

Yang, Xiang ^{[1
]}

Yang, Fuhua ^{[1
]}

Zhao, Jianhua ^{[1
]}

Misuraca, Jennifer ^{[2
]}

Xiong, Peng ^{[2
]}

von Molnar, Stephan ^{[2
]}

机构：

[1] Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, Beijing 100083, Peoples R China

[2] Florida State Univ, Dept Phys, Tallahassee, FL 32306 USA

来源：

NANO LETTERS | 2011年 / 11卷 / 07期

基金：

美国国家科学基金会; 中国国家自然科学基金;

关键词：

Magnetic semiconductors; magnetic properties of nanostructures; magnetotransport phenomena; molecular-beam epitaxy; MANIPULATION;

D O I：

10.1021/nl201187m

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

We demonstrate by magneto-transport measurements that a Curie temperature as high as 200 K can be obtained in nanostructures of (Ga,Mn)As. Heavily Mn-doped (Ga,Mn)As films were patterned into nanowires and then subject to low-temperature annealing. Resistance and Hall effect measurements demonstrated a consistent increase of T-C with decreasing wire width down to about 300 nm. This observation is attributed primarily to the increase of the free surface in the narrower wires, which allows the Mn interstitials to diffuse out at the sidewalls, thus enhancing the efficiency of annealing. These results may provide useful information on optimal structures for (Ga,Mn)As-based nanospintronic devices operational at relatively high temperatures.

引用

页码：2584 / 2589

页数：6

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