Electrical properties of n-type GaPN grown by molecular-beam epitaxy

被引：17

作者：

Furukawa, Y ^{[1
]}

Yonezu, H ^{[1
]}

Wakahara, A ^{[1
]}

Yoshizumi, Y ^{[1
]}

Morita, Y ^{[1
]}

Sato, A ^{[1
]}

机构：

[1] Toyohashi Univ Technol, Dept Elect & Elect Engn, Toyohashi, Aichi 4418580, Japan

来源：

APPLIED PHYSICS LETTERS | 2006年 / 88卷 / 14期

关键词：

D O I：

10.1063/1.2193350

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have investigated electrical properties of n-GaPN layers grown by molecular-beam epitaxy with an rf-plasma source using sulfur and tellurium as dopants. The electron concentration in n-GaPN was about 10 times lower than that in n-GaP. Desorption of dopants from the grown surface by impinging N atoms may be one of the possible causes for the reduced electron concentration. In addition, electron mobilities in GaPN were restricted by ionized impurity scattering even at room temperature (RT). N atoms at N-related levels could trap the electrons, and these ionized N could act as a Columb scattering center for free electrons even at RT. (c) 2006 American Institute of Physics.

引用

页数：3

共 16 条

[1] Analysis of band anticrossing in GaNxP1-x alloys -: art. no. 085209 [J].

Buyanova, IA ;

Izadifard, M ;

Kasic, A ;

Arwin, H ;

Chen, WM ;

Xin, HP ;

Hong, YG ;

Tu, CW .

PHYSICAL REVIEW B, 2004, 70 (08) :085209-1

[2] Radiative recombination mechanism in GaNxP1-x alloys [J].

Buyanova, IA ;

Rudko, GY ;

Chen, WM ;

Xin, HP ;

Tu, CW .

APPLIED PHYSICS LETTERS, 2002, 80 (10) :1740-1742

[3] Dislocation-free GaAsyP1-x-yNx/GaP0.98N0.02 quantum-well structure lattice-matched to a Si substrate [J].

Fujimoto, Y ;

Yonezu, H ;

Utsumi, A ;

Momose, K ;

Furukawa, Y .

APPLIED PHYSICS LETTERS, 2001, 79 (09) :1306-1308

[4]

FURUKAWA Y, UNPUB

[5] Unintentional carbon and hydrogen incorporation in GaNP grown by metal-organic chemical vapor deposition [J].

Geisz, JF ;

Reedy, RC ;

Keyes, BM ;

Metzger, WK .

JOURNAL OF CRYSTAL GROWTH, 2003, 259 (03) :223-231

[6] OPTOELECTRONIC DEVICES AND MATERIAL TECHNOLOGIES FOR PHOTO-ELECTRONIC INTEGRATED SYSTEMS [J].

HAYASHI, I .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1993, 32 (1B) :266-271

[7] Effect of nitrogen on the optical and transport properties of Ga0.48In0.52NyP1-y grown on GaAs(001) substrates [J].

Hong, YG ;

Nishikawa, A ;

Tu, CW .

APPLIED PHYSICS LETTERS, 2003, 83 (26) :5446-5448

[8] Minority carrier diffusion, defects, and localization in InGaAsN, with 2% nitrogen [J].

Kurtz, SR ;

Allerman, AA ;

Seager, CH ;

Sieg, RM ;

Jones, ED .

APPLIED PHYSICS LETTERS, 2000, 77 (03) :400-402

[9] Dislocation-free and lattice-matched Si/GaP1-xNx/Si structure for photo-electronic integrated systems [J].

Momose, K ;

Yonezu, H ;

Fujimoto, Y ;

Furukawa, Y ;

Motomura, Y ;

Aiki, K .

APPLIED PHYSICS LETTERS, 2001, 79 (25) :4151-4153

[10] The role of dislocation scattering in n-type GaN films [J].

Ng, HM ;

Doppalapudi, D ;

Moustakas, TD ;

Weimann, NG ;

Eastman, LF .

APPLIED PHYSICS LETTERS, 1998, 73 (06) :821-823

← 1 2 →