Dislocation-free and lattice-matched Si/GaP1-xNx/Si structure for photo-electronic integrated systems

We proposed a Si/III-V-N compound semiconductors/Si structure, which is applicable to optoelectronic integrated circuits (OEICs). The feature of this structure is that optoelectronic devices and Si electronic devices could be fabricated by low-temperature planar process at the same time. A dislocation-free and lattice-matched Si/GaP1-xNx/Si (x=2.9%) structure, which is a basic structure for OEICs, was grown by molecular-beam epitaxy. The images of transmission electron microscopy revealed that there were no threading dislocations and misfit dislocations in the epitaxial layers. It was clarified that the Si and GaP1-xNx layers were lattice-matched to Si and had structural high crystalline quality comparable to Si substrates. (C) 2001 American Institute of Physics.