Scanning tunnelling microscopy studies of silicides

被引:20
作者
Bennett, PA
von Känel, H
机构
[1] Arizona State Univ, Dept Phys & Astron, Tempe, AZ 85287 USA
[2] ETH Honggerberg, Festkorperphys Lab, CH-8093 Zurich, Switzerland
关键词
D O I
10.1088/0022-3727/32/15/201
中图分类号
O59 [应用物理学];
学科分类号
摘要
We review the topic of scanning tunnelling microscopy (STM) studies of silicides, with an emphasis on fundamental scientific issues that can be addressed using STM and ballistic-electron-emission microscopy (BEEM). The discussion is organized according to the topics of structure (atomic scale precursors, surface reconstructions, bulk structures, interfaces) kinetics and growth (direct atomic measurement, modelling, stoichiometry, layer and island growth, phase transitions and nanoscale metallization) and BEEM (method, band structure, Schottky barrier, defect scattering, inelastic scattering and surface effects). These topics are described in general terms, then elaborated with specific examples.
引用
收藏
页码:R71 / R87
页数:17
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