Zinc Incorporation via the Vapor-Liquid-Solid Mechanism into InP Nanowires

被引：35

作者：

van Weert, Maarten H. M. ^{[1
]}

Helman, Ana ^{[2
]}

van den Einden, Wim ^{[2
]}

Algra, Rienk E. ^{[2
]}

Verheijen, Marcel A. ^{[2
]}

Borgstrom, Magnus T. ^{[2
]}

Immink, George ^{[2
]}

Kelly, John J.

Kouwenhoven, Leo P. ^{[1
]}

Bakkers, Erik P. A. M. ^{[2
]}

机构：

[1] Delft Univ Technol, Kavli Inst Nanosci Delft, NL-2628 CJ Delft, Netherlands

[2] Philips Res Labs, NL-5656 AE Eindhoven, Netherlands

来源：

JOURNAL OF THE AMERICAN CHEMICAL SOCIETY | 2009年 / 131卷 / 13期

关键词：

FIELD-EFFECT TRANSISTOR; III-V NANOWIRES; P-N-JUNCTION; SILICON; REALIZATION; GERMANIUM; GROWTH;

D O I：

10.1021/ja809871j

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

We report the incorporation of zinc atoms into vapor-liquid-solid grown indium phosphide nanowires via a gold catalyst particle. We demonstrate this by synthesizing axial pn-junctions, chemically etching them, and fabricating electrical contacts in a vertical configuration. Electrical measurements show clear diode behavior. Control of dopant incorporation is crucial for future applications and will eventually lead to full freedom of design.

引用

页码：4578 / +

页数：4

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