Remote p-doping of InAs nanowires

被引：69

作者：

Li, H.-Y. ^{[1
]}

Wunnicke, O. ^{[1
]}

Borgstrom, M. T. ^{[1
]}

Immink, W. G. G. ^{[1
]}

van Weert, M. H. M. ^{[1
]}

Verheijen, M. A. ^{[1
]}

Bakkers, E. P. A. M. ^{[1
]}

机构：

[1] Philips Res Labs, NL-5656 AE Eindhoven, Netherlands

来源：

NANO LETTERS | 2007年 / 7卷 / 05期

关键词：

D O I：

10.1021/nl0627487

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

We report on remote p-type doping of InAs nanowires by a p-doped InP shell grown epitaxially on the core nanowire. This approach addresses the challenge of obtaining quantitative control of doping levels in nanowires grown by the vapor-liquid-solid (VLS) mechanism. Remote doping of III-V nanowires is demonstrated here with the InAs/InP system. It is especially challenging to make p-type InAs wires because of Fermi level pinning around 0.1 eV above the conduction band. We demonstrate that shielding with a p-doped InP shell compensates for the built-in potential and donates free holes to the InAs core. Moreover, the off-current in field-effect devices can be reduced up to 6 orders of magnitude. The effect of shielding critically depends on the thickness of the InP capping layer and the dopant concentration in the shell.

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收藏

页码：1144 / 1148

页数：5

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