Remote p-doping of InAs nanowires

被引：69

作者：

Li, H.-Y. ^{[1
]}

Wunnicke, O. ^{[1
]}

Borgstrom, M. T. ^{[1
]}

Immink, W. G. G. ^{[1
]}

van Weert, M. H. M. ^{[1
]}

Verheijen, M. A. ^{[1
]}

Bakkers, E. P. A. M. ^{[1
]}

机构：

[1] Philips Res Labs, NL-5656 AE Eindhoven, Netherlands

来源：

NANO LETTERS | 2007年 / 7卷 / 05期

关键词：

D O I：

10.1021/nl0627487

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

We report on remote p-type doping of InAs nanowires by a p-doped InP shell grown epitaxially on the core nanowire. This approach addresses the challenge of obtaining quantitative control of doping levels in nanowires grown by the vapor-liquid-solid (VLS) mechanism. Remote doping of III-V nanowires is demonstrated here with the InAs/InP system. It is especially challenging to make p-type InAs wires because of Fermi level pinning around 0.1 eV above the conduction band. We demonstrate that shielding with a p-doped InP shell compensates for the built-in potential and donates free holes to the InAs core. Moreover, the off-current in field-effect devices can be reduced up to 6 orders of magnitude. The effect of shielding critically depends on the thickness of the InP capping layer and the dopant concentration in the shell.

引用

收藏

页码：1144 / 1148

页数：5

相关论文

共 30 条

[21] Position-controlled epitaxial III-V nanowires on silicon [J].

Roest, Aarnoud L. ;

Verheijen, Marcel A. ;

Wunnicke, Olaf ;

Serafin, Stacey ;

Wondergem, Harry ;

Bakkers, Erik P. A. M. .

NANOTECHNOLOGY, 2006, 17 (11) :S271-S275

[22] Semiconductor nanowires for 0D and 1D physics and applications [J].

Samuelson, L ;

Thelander, C ;

Björk, MT ;

Borgström, M ;

Deppert, K ;

Dick, KA ;

Hansen, AE ;

Mårtensson, T ;

Panev, N ;

Persson, AI ;

Seifert, W ;

Sköld, N ;

Larsson, MW ;

Wallenberg, LR .

PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, 2004, 25 (2-3) :313-318

[23]

Sze S.M., 2013, SEMICONDUCTOR DEVICE

[24] Supercurrent reversal in quantum dots [J].

Van Dam, Jorden A. ;

Nazarov, Yuli V. ;

Bakkers, Erik P. A. M. ;

De Franceschi, Silvano ;

Kouwenhoven, Leo P. .

NATURE, 2006, 442 (7103) :667-670

[25] Large redshift in photoluminescence of p-doped InP nanowires induced by Fermi-level pinning [J].

van Weert, MHM ;

Wunnicke, O ;

Roest, AL ;

Eijkemans, TJ ;

Yu Silov, A ;

Haverkort, JEM ;

't Hooft, GW ;

Bakkers, EPAM .

APPLIED PHYSICS LETTERS, 2006, 88 (04) :1-3

[26] Growth kinetics of heterostructured GaP-GaAs nanowires [J].

Verheijen, MA ;

Immink, G ;

de Smet, T ;

Borgström, MT ;

Bakkers, EPAM .

JOURNAL OF THE AMERICAN CHEMICAL SOCIETY, 2006, 128 (04) :1353-1359

[27] Diffusion of zinc acceptors in InAsP by the metal-organic vapor-phase diffusion technique [J].

Wada, M ;

Izumi, K ;

Sakakibara, K .

APPLIED PHYSICS LETTERS, 1997, 71 (07) :900-902

[28] Surface chemistry and electrical properties of germanium nanowires [J].

Wang, DW ;

Chang, YL ;

Wang, Q ;

Cao, J ;

Farmer, DB ;

Gordon, RG ;

Dai, HJ .

JOURNAL OF THE AMERICAN CHEMICAL SOCIETY, 2004, 126 (37) :11602-11611

[29] Gate capacitance of back-gated nanowire field-effect transistors [J].

Wunnicke, Olaf .

APPLIED PHYSICS LETTERS, 2006, 89 (08)

[30] Ge/Si nanowire heterostructures as high-performance field-effect transistors [J].

Xiang, Jie ;

Lu, Wei ;

Hu, Yongjie ;

Wu, Yue ;

Yan, Hao ;

Lieber, Charles M. .

NATURE, 2006, 441 (7092) :489-493