Position-controlled epitaxial III-V nanowires on silicon

We show the epitaxial integration of III - V semiconductor nanowires with silicon technology. The wires are grown by the VLS mechanism with laser ablation as well as metal - organic vapour phase epitaxy. The hetero-epitaxial growth of the III - V nanowires on silicon was confirmed with x-ray diffraction pole figures and cross-sectional transmission electron microscopy. We show preliminary results of two-terminal electrical measurements of III - V nanowires grown on silicon. E-beam lithography was used to predefine the position of the nanowires.