Visible luminescence from C-containing silicon oxide films

被引：18

作者：

SendovaVassileva, M ^{[1
]}

Tzenov, N ^{[1
]}

DimovaMalinovska, D ^{[1
]}

Marinova, T ^{[1
]}

Krastev, V ^{[1
]}

机构：

[1] BULGARIAN ACAD SCI,INST GEN & INORGAN CHEM,BU-1113 SOFIA,BULGARIA

来源：

THIN SOLID FILMS | 1996年 / 276卷 / 1-2期

关键词：

luminescence; carbon; silicon oxide; sputtering;

D O I：

10.1016/0040-6090(95)08107-0

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Luminescent a-Si:O:C layers were obtained by magnetron co-sputtering and annealing. The maximum photoluminescence intensity is comparable with that of porous silicon. The luminescence maximum is between 1.8 eV and 2.2 eV, X-ray photoelectron spectroscopy finds both C-Si and C-C bonding and maximum luminescence is obtained when the amount of the two kinds of bonding is comparable.

引用

页码：318 / 322

页数：5

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