Si(001) surface oxidation by N2O

被引：11

作者：

Hoffmann, P ^{[1
]}

Mikalo, RP ^{[1
]}

Schmeisser, D ^{[1
]}

机构：

[1] Univ Cottbus, Lehrstuhl Angew Phys 2, D-03046 Cottbus, Germany

来源：

JOURNAL OF NON-CRYSTALLINE SOLIDS | 2002年 / 303卷 / 01期

关键词：

D O I：

10.1016/S0022-3093(02)00956-0

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Ultra-thin homogeneous oxynitride films are prepared on Si(001). The Si surface is cleaned in UHV by heating (flashing) and is exposed to different pressures of N2O at altered temperatures. Thus oxynitride layers of different thickness and different properties are grown depending on the N2O pressure and the Si temperature. This is illustrated by a schematic diagram. The properties of the different oxynitride layers were studied by a combined photoemission electron microscopy (PEEM) and photoelectron spectroscopy (PES) investigation using highly monochromatic synchrotron radiation. The amount of oxygen and nitrogen incorporated in the oxynitride layers is determined from the PES measurements. The typical surface morphology for different preparation conditions is shown in PEEM images. (C) 2002 Elsevier Science B.V. All rights reserved.

引用

页码：6 / 11

页数：6

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