Modelling and simulations of nanostructures for Shipley SPR505A resist using PRIME process

被引：4

作者：

Arshak, KI ^{[1
]}

Mihov, M ^{[1
]}

Arshak, A ^{[1
]}

McDonagh, D ^{[1
]}

Pomeroy, M ^{[1
]}

机构：

[1] Univ Limerick, Dept Elect & Comp Engn, Limerick, Ireland

来源：

PROCEEDINGS OF THE 2001 1ST IEEE CONFERENCE ON NANOTECHNOLOGY | 2001年

关键词：

D O I：

10.1109/NANO.2001.966463

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The Positive Resist IMage by dry Etching (PRIME) process is a high resolution lithography system incorporating electron beam exposure. silylation and dry development. The process steps in PRIME with Shipley SPR505A resist have been modeled and simulations of nanostructures (50nm lines/spaces, 30nm single line) has been presented. The silylation process step in PRIME with SPR505A resist has been experimentally characterized using FT-IR spectroscopy.

引用

页码：440 / 445

页数：6

共 15 条

[1] TOPOGRAPHY SIMULATION IN PHOTOLITHOGRAPHY USING FINITE-ELEMENT ANALYSIS AND A MODIFIED STRING ALGORITHM [J].

ARSHAK, KI ;

MCDONAGH, D ;

MATHUR, BP ;

ARSHAK, A .

COMPEL-THE INTERNATIONAL JOURNAL FOR COMPUTATION AND MATHEMATICS IN ELECTRICAL AND ELECTRONIC ENGINEERING, 1994, 13 (04) :871-878

[2]

BAUCH L, 1994, P 10 INT C PHOT, P343

[3] MODELING PROJECTION PRINTING OF POSITIVE PHOTORESISTS [J].

DILL, FH ;

NEUREUTHER, AR ;

TUTTLE, JA ;

WALKER, EJ .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1975, ED22 (07) :456-464

[4] COMPARISON OF LIQUID-PHASE AND VAPOR-PHASE SILYLATION PROCESSES FOR 193-NM POSITIVE-TONE LITHOGRAPHY [J].

HARTNEY, MA ;

KUNZ, RR ;

ERIKSEN, LM ;

LATULIPE, DC .

OPTICAL ENGINEERING, 1993, 32 (10) :2382-2387

[5]

HUTCHINSON J, 1993, P SOC PHOTO-OPT INS, V1925, P414, DOI 10.1117/12.154777

[6] Lithography: A look at what is ahead [J].

Levinson, HJ .

OPTICAL METROLOGY ROADMAP FOR THE SEMICONDUCTOR, OPTICAL, AND DATA STORAGE INDUSTRIES, 2000, 4099 :1-15

[7]

MACK C, 1988, PROLITH USERS GUIDE

[8] ANALYTICAL EXPRESSION FOR THE STANDING WAVE INTENSITY IN PHOTORESIST [J].

MACK, CA .

APPLIED OPTICS, 1986, 25 (12) :1958-1961

[9]

MATHUR BP, 1994, P SOC PHOTO-OPT INS, V2195, P497, DOI 10.1117/12.175364

[10] SLITS simulator: Modeling and simulation of e-beam/deep-ultraviolet exposure and silylation [J].

McDonagh, D ;

Arshak, KI ;

Arshak, A ;

Braddell, J .

OPTICAL ENGINEERING, 1996, 35 (01) :277-283

← 1 2 →