Modelling and simulations of nanostructures for Shipley SPR505A resist using PRIME process

被引：4

作者：

Arshak, KI ^{[1
]}

Mihov, M ^{[1
]}

Arshak, A ^{[1
]}

McDonagh, D ^{[1
]}

Pomeroy, M ^{[1
]}

机构：

[1] Univ Limerick, Dept Elect & Comp Engn, Limerick, Ireland

来源：

PROCEEDINGS OF THE 2001 1ST IEEE CONFERENCE ON NANOTECHNOLOGY | 2001年

关键词：

D O I：

10.1109/NANO.2001.966463

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The Positive Resist IMage by dry Etching (PRIME) process is a high resolution lithography system incorporating electron beam exposure. silylation and dry development. The process steps in PRIME with Shipley SPR505A resist have been modeled and simulations of nanostructures (50nm lines/spaces, 30nm single line) has been presented. The silylation process step in PRIME with SPR505A resist has been experimentally characterized using FT-IR spectroscopy.

引用

页码：440 / 445

页数：6

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