Simultaneous measurement of six layers in a silicon on insulator film stack using spectrophotometry and beam profile reflectometry

被引:14
作者
Leng, JM [1 ]
Sidorowich, JJ [1 ]
Yoon, YD [1 ]
Opsal, J [1 ]
Lee, BH [1 ]
Cha, G [1 ]
Moon, J [1 ]
Lee, SI [1 ]
机构
[1] SAMSUNG ELECT CO LTD,SEMICOND R&D CTR,PROC DEV TEAM,KYUNGKI,SOUTH KOREA
关键词
D O I
10.1063/1.364994
中图分类号
O59 [应用物理学];
学科分类号
摘要
We performed simultaneous measurements of all the layer thicknesses in six layer silicon on oxide film structures, Visible-near-infrared spectrophatometry was combined with beam profile reflectometry to produce enough information to discriminate between potential solutions the spectrometer or beam profile reflectometer alone is insufficient to solve such a complicated film stack. Development of a robust measurement recipe required a new global optimization method working in parameter spaces of up to 12 parameters, The recipe obtained was applied to a 50 site mapping of the wafer. We found excellent agreement between our optical measurement results and scanning electron micrograph data fur all thicknesses. (C) 1997 American Institute of Physics.
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收藏
页码:3570 / 3578
页数:9
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