Atomic layer deposition (ALD):: from precursors to thin film structures

被引：1078

作者：

Leskelä, M ^{[1
]}

Ritala, M ^{[1
]}

机构：

[1] Univ Helsinki, Dept Chem, FIN-00014 Helsinki, Finland

来源：

THIN SOLID FILMS | 2002年 / 409卷 / 01期

关键词：

atomic layer deposition (ALD); atomic layer epitaxy (ALE); thin films;

D O I：

10.1016/S0040-6090(02)00117-7

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The principles of the atomic layer deposition (ALD) method are presented emphasizing the importance of precursor and surface chemistry. With a proper adjustment of the experimental conditions, i.e. temperatures and pulsing times, the growth proceeds via saturative steps. Selected recent ALD processes developed for films used in microelectronics are described as examples. These include deposition of oxide films for dielectrics, and nitride and metal films for metallizations. The use of a plasma source to form radicals is expanding the selection of ALD films to metals. Plasma-enhanced ALD also facilitates the deposition of nitride films at low temperatures. (C) 2002 Elsevier Science B.V. All rights reserved.

引用

页码：138 / 146

页数：9

共 96 条

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