Micro-electroluminescence spectroscopy investigation of mounting-induced strain and defects on high power GaAs/AlGaAs laser diodes

被引：6

作者：

Xia, R

Andrianov, AV

Bull, S

Harrison, I

Landesman, JP

Larkins, EC

机构：

[1] Univ Nottingham, Sch Elect & Elect Engn, Nottingham NG7 2RD, England

[2] AF Ioffe Phys Tech Inst, St Petersburg 194021, Russia

[3] THALES Res & Technol, F-91404 Orsay, France

来源：

OPTICAL AND QUANTUM ELECTRONICS | 2003年 / 35卷 / 12期

关键词：

defects; degradation; electroluminescence; laser diode; strain; FACETS;

D O I：

10.1023/A:1026290008885

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The degradation behaviour of AlGaAs high power laser bars has been investigated using microelectroluminescence (mu-EL) spectroscopy, electroluminescence microscopy (ELM) and micro-photocurrent (mu-PC) spectroscopy. The emitters in each bar have been individually studied in detail. A significant blue shift of the EL spectra was observed for certain emitters. Inspection of these blue-shifted emitters with ELM also showed the presence of extended defects. The EL spectral shifts correlate with the blue shift of the quantum well (QW) absorption edge observed by photocurrent ( PC) spectroscopy and is caused by a mounting induced strain. This correlation suggests that mu-EL spectroscopy is a reliable and sensitive technology for the recognition of defective emitters and thus for the reliability assessment of high power laser bars.

引用

页码：1099 / 1106

页数：8

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