High-performance diamond metal-semiconductor field-effect transistor with 1 μm gate length

High-performance metal-semiconductor held-effect transistors (MESFETs) using the p-type surface conductive layer on homoepitaxial diamond are demonstrated. The maximum transconductance is 110 mS/mm, which is the highest value ever reported in diamond FETs. This value exceeds the normal transconductance of a Si-metal-oxide semiconductor field-effect transistors (MOSFET) with equivalent gate length: The transconductance of the present diamond FETs is proportional to the reciprocal of gate length. Accordingly, the characteristics can be improved by the refinement of gate length. By using an appropriate FET fabrication process, it is expected that the transconductance of a diamond MESFET exceeds 500 mS/mm at gate lengths less than 0.2 mu m.