Improved stability of metal-insulator-diamond semiconductor interface by employing BaF2 insulator film

被引：6

作者：

Tanaka, H ^{[1
]}

Yun, Y ^{[1
]}

Shirakawa, Y ^{[1
]}

Maki, T ^{[1
]}

Kobayashi, T ^{[1
]}

机构：

[1] Osaka Univ, Fac Engn Sci, Dept Elect Engn, Toyonaka, Osaka 560, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1998年 / 37卷 / 12A期

关键词：

BaF2; CaF2; MgF2; diamond; MIS; C-V curve; surface state;

D O I：

10.1143/JJAP.37.L1444

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Diamond metal-insulator-semiconductor (MIS) structures were fabricated by employing various fluorides as gate insulator (MgF2, CaF2 and BaF2) and their electrical properties were closely investigated by means of C-V measurements. The C-V characteristics of a BaF2/diamond structure exhibited outstanding electrical properties (surface state density less than 2 x 10(10)/(cm(2).eV) near the valence bandedge) as compared with the structures obtained using other fluorides. From the chemi-physical point of view, the above result might be explained as being due to the reduction of adsorbed-oxygen on the diamond surface via a strong chemical reaction by the constituent Ba atoms in the insulator during the film deposition.

引用

页码：L1444 / L1447

页数：4

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