FERMI-LEVEL PINNING IN METAL-INSULATOR-DIAMOND STRUCTURES

被引：44

作者：

OTSUKA, Y

SUZUKI, S

SHIKAMA, S

MAKI, T

KOBAYASHI, T

机构：

[1] Osaka University, Toyonaka, Osaka, 560

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1995年 / 34卷 / 5A期

关键词：

DIAMOND; FILM; MIS; CAF2; CAPACITANCE-VOLTAGE CHARACTERISTIC; EBIC; FERMI LEVEL PINNING;

D O I：

10.1143/JJAP.34.L551

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Capacitance-voltage (C-V) and electron-beam-induced current (EBIC) measurements were performed on metal-insulator-semiconductive (MIS) diamond structures. Utilizing BaTiO3 (BTO) as the gate insulator of diamond MIS structures, experimental results indicate pinning of the Fermi energy at similar to 1.7 eV above the valence band edge, which is in excellent agreement with the 1/3 band-gap rule of Mead and Spitzer. This is due to the existence of surface states on diamond presumably induced by oxygen adsorption. Employing CaF2 in place of BTO reduced the Fermi level pinning to a large extent by virtue of its oxygen-free process.

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页码：L551 / L554

页数：4

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