High-efficiency 350 nm-band quaternary InAlGaN-based UV-LED on GaN/sapphire template

被引：10

作者：

Hirayama, H ^{[1
]}

Kyono, T ^{[1
]}

Akita, K ^{[1
]}

Nakamura, T ^{[1
]}

Ishibashi, K ^{[1
]}

机构：

[1] RIKEN, Inst Phys & Chem Res, Wako, Saitama 3510198, Japan

来源：

Physica Status Solidi C - Conferences and Critical Reviews, Vol 2, No 7 | 2005年 / 2卷 / 07期

关键词：

D O I：

10.1002/pssc.200461446

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

We hive demonstrated high-efficiency ultraviolet (UV) light-emitting diode (LED) with emission wavelength at 349 nm using quaternary InAlGaN multiple-quantum-well (MQW) fabricated on a GaN/sapphire template. The threading dislocation density of the GaN/sapphire template was approximately 1x10(9)cm(-2). The maximum UV output power obtained was as high as 4.1 mW with an injection current of 160 mA under room temperature (RT) CW operation. The maximum external quantum efficiency (EQE) was 1.02% with an injection current of 60 mA, which is higher than the EQE obtained for a 350 nm-band AlGaN-based QW LED fabricated on GaN substrate. From these result, we confirmed the advantage of the use of quaternary InAlGaN for 350 nm-band UV emitters in comparison with the use of AlGaN. (c) 2005 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

引用

页码：2899 / 2902

页数：4

共 13 条

[1] High-efficiency 352 nm quaternary InAlGaN-based ultraviolet light-emitting diodes grown on GaN substrates [J].

Hirayama, H ;

Akita, K ;

Kyono, T ;

Nakamura, T ;

Ishibashi, K .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 2004, 43 (10A) :L1241-L1243

[2] Fabrication of a low-threading-dislocation-density AlxGa1-xN buffer on SiC using highly Si-doped AlxGa1-xN superlattices [J].

Hirayama, H ;

Ainoya, M ;

Kinoshita, A ;

Hirata, A ;

Aoyagi, Y .

APPLIED PHYSICS LETTERS, 2002, 80 (12) :2057-2059

[3] Room-temperature intense 320 nm band ultraviolet emission from quaternary InAlGaN-based multiple-quantum wells [J].

Hirayama, H ;

Enomoto, Y ;

Kinoshita, A ;

Hirata, A ;

Aoyagi, Y .

APPLIED PHYSICS LETTERS, 2002, 80 (09) :1589-1591

[4] Marked enhancement of 320-360 nm ultraviolet emission in quaternary InxAlyGa1-x-yN with In-segregation effect [J].

Hirayama, H ;

Kinoshita, A ;

Yamabi, T ;

Enomoto, Y ;

Hirata, A ;

Araki, T ;

Nanishi, Y ;

Aoyagi, Y .

APPLIED PHYSICS LETTERS, 2002, 80 (02) :207-209

[5]

Hirayama H, 2001, PHYS STATUS SOLIDI A, V188, P83, DOI 10.1002/1521-396X(200111)188:1<83::AID-PSSA83>3.0.CO

[6]

2-3

[7]

HIRAYAMA H, 2004, 5 INT S BLUE LAS LIG

[8]

KHAN MA, 2003, 5 INT S BLUE LAS LIG

[9] High output power 365 nm ultraviolet light emitting diode of GaN-free structure [J].

Morita, D ;

Sano, M ;

Yamamoto, M ;

Murayama, T ;

Nagahama, S ;

Mukai, T .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 2002, 41 (12B) :L1434-L1436

[10] Preparation of large freestanding GaN substrates by hydride vapor phase epitaxy using GaAs as a starting substrate [J].

Motoki, K ;

Okahisa, T ;

Matsumoto, N ;

Matsushima, M ;

Kimura, H ;

Kasai, H ;

Takemoto, K ;

Uematsu, K ;

Hirano, T ;

Nakayama, M ;

Nakahata, S ;

Ueno, M ;

Hara, D ;

Kumagai, Y ;

Koukitu, A ;

Seki, H .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 2001, 40 (2B) :L140-L143

← 1 2 →