Force sensing submicrometer thick cantilevers with ultra-thin piezoresistors by rapid thermal diffusion

被引:86
作者
Gel, M [1 ]
Shimoyama, I [1 ]
机构
[1] Univ Tokyo, Shimoyama Lab, Dept Mechano Informat, Bunkyo Ku, Tokyo 1138656, Japan
关键词
D O I
10.1088/0960-1317/14/3/016
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
One of the most important requirements for a cantilever-type sensor to obtain high force sensitivity is small thickness. By using current micromachining technology it is possible to produce cantilevers of submicrometer thickness. Where self-sensing piezoresistive cantilevers with submicrometer thickness are concerned, it is necessary to use a technology which can create ultra-thin (< 100 nm) piezoresistors on a cantilever surface. This work demonstrates for the first time the application of a relatively simple, rapid thermal diffusion method by using spin-on glass film to fabricate sub-100 nm piezoresistors on an ultra-thin single-crystal silicon cantilever. Compared to other shallow junction fabrication methods, which involve implantation or deposition of a doped layer, this method is advantageous since no damage is created in the crystal structure and no toxic gas or hazardous material is used during the process. Besides, this technique can be applied by using low-cost rapid annealers, which can be readily found in most laboratories. By using this method, piezoresistive cantilevers with stiffness in the range of 0.001 N m(-1) with sub-100 nm thick piezoresistors are fabricated, and a complete characterization of the fabricated cantilevers is performed.
引用
收藏
页码:423 / 428
页数:6
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