Resonant tunneling diodes made up of stacked self-assembled Ge/Si islands

被引：41

作者：

Schmidt, OG

Denker, U

Eberl, K

Kienzle, O

Ernst, F

Haug, RJ

机构：

[1] Max Planck Inst Festkorperforsch, D-70569 Stuttgart, Germany

[2] Max Planck Inst Met Res, D-70174 Stuttgart, Germany

[3] Leibniz Univ Hannover, Inst Festkorperphys, D-30167 Hannover, Germany

来源：

APPLIED PHYSICS LETTERS | 2000年 / 77卷 / 26期

关键词：

D O I：

10.1063/1.1332817

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Multiple layers of self-assembled Ge/Si islands are used for resonant tunneling diodes (RTDs). The extremely closely stacked Ge nanostructures form vertical channels with energetically deep thermalization layers and high Si double barriers. Two resonances are found in the RTD current-voltage curve, which are attributed to the heavy-heavy hole (hh) and heavy-light hole (lh) transition. The lh resonance shows negative differential resistance up to 50 K. With increasing magnetic field, the lh resonance slightly shifts to higher voltages. (C) 2000 American Institute of Physics. [S0003-6951(00)01951-3].

引用

收藏

页码：4341 / 4343

页数：3

相关论文

共 19 条

[1] STRAINED STATE OF GE(SI) ISLANDS ON SI - FINITE-ELEMENT CALCULATIONS AND COMPARISON TO CONVERGENT-BEAM ELECTRON-DIFFRACTION MEASUREMENTS [J].

CHRISTIANSEN, S ;

ALBRECHT, M ;

STRUNK, HP ;

MAIER, HJ .

APPLIED PHYSICS LETTERS, 1994, 64 (26) :3617-3619

[2] High-resolution x-ray diffraction from multilayered self-assembled Ge dots [J].

Darhuber, AA ;

Schittenhelm, P ;

Holy, V ;

Stangl, J ;

Bauer, G ;

Abstreiter, G .

PHYSICAL REVIEW B, 1997, 55 (23) :15652-15663

[3] Size distribution of Ge islands grown on Si(001) [J].

Goryll, M ;

Vescan, L ;

Schmidt, K ;

Mesters, S ;

Luth, H ;

Szot, K .

APPLIED PHYSICS LETTERS, 1997, 71 (03) :410-412

[4] Germanium "quantum dots" embedded in silicon:: Quantitative study of self-alignment and coarsening [J].

Kienzle, O ;

Ernst, F ;

Rühle, M ;

Schmidt, OG ;

Eberl, K .

APPLIED PHYSICS LETTERS, 1999, 74 (02) :269-271

[5] Nucleation and growth of self-assembled Ge/Si(001) quantum dots [J].

Le Thanh, V ;

Boucaud, P ;

Debarre, D ;

Zheng, Y ;

Bouchier, D ;

Lourtioz, JM .

PHYSICAL REVIEW B, 1998, 58 (19) :13115-13120

[6] RESONANT TUNNELING IN SI/SI1-XGEX DOUBLE-BARRIER STRUCTURES [J].

LIU, HC ;

LANDHEER, D ;

BUCHANAN, M ;

HOUGHTON, DC .

APPLIED PHYSICS LETTERS, 1988, 52 (21) :1809-1811

[7] Optical and acoustic phonon modes in self-organized Ge quantum dot superlattices [J].

Liu, JL ;

Jin, G ;

Tang, YS ;

Luo, YH ;

Wang, KL ;

Yu, DP .

APPLIED PHYSICS LETTERS, 2000, 76 (05) :586-588

[8] Mechanism of organization of three-dimensional islands in SiGe/Si multilayers [J].

Mateeva, E ;

Sutter, P ;

Bean, JC ;

Lagally, MG .

APPLIED PHYSICS LETTERS, 1997, 71 (22) :3233-3235

[9] Shape transition of germanium nanocrystals on a silicon (001) surface from pyramids to domes [J].

Medeiros-Ribeiro, G ;

Bratkovski, AM ;

Kamins, TI ;

Ohlberg, DAA ;

Williams, RS .

SCIENCE, 1998, 279 (5349) :353-355

[10] Surface electronic structure modifications due to buried quantum dots [J].

Meyer, T ;

Klemenc, M ;

von Kanel, H .

PHYSICAL REVIEW B, 1999, 60 (12) :R8493-R8496