Optical and electrical properties of Sn-doped indium oxide films deposited on polyester by reactive evaporation

被引：16

作者：

Ma, J ^{[1
]}

Zhang, DH

Li, SY

Zhao, JQ

Ma, HL

机构：

[1] Shandong Univ, Inst Optoelect Mat & Devices, Jinan 250100, Peoples R China

[2] Shandong Univ, Dept Phys, Jinan 250100, Peoples R China

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1998年 / 37卷 / 10期

关键词：

transparent conducting ITO films; organic substrate; reactive evaporation;

D O I：

10.1143/JJAP.37.5614

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Transparent conducting Sn-doped indium oxide (ITO) films have been prepared on polyimide (PI) thin film substrate at low substrate temperature by reactive evaporation. The structural, optical and electrical properties of the deposited films have been investigated. High quality films with resistivity as low as 7 x 10(-4) Omega.cm and transmittance over 80% have been obtained. The temperature dependence of mobility and carrier concentration have been measured over a temperature range 10-400 K. Corresponding scattering mechanism of charge carriers in the films have been discussed.

引用

页码：5614 / 5617

页数：4

共 12 条

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