Charge transport and density of trap states in balanced high mobility ambipolar organic thin-film transistors

被引:38
作者
Ha, Tae-Jun [1 ]
Sonar, Prashant [2 ]
Cobb, Brian [1 ]
Dodabalapur, Ananth [1 ]
机构
[1] Univ Texas Austin, Microelect Res Ctr, Austin, TX 78758 USA
[2] ASTAR, Inst Mat Res & Engn, Singapore 117602, Singapore
基金
美国国家科学基金会;
关键词
Charge carrier transport; Ambipolar organic thin-film transistors; High mobility and balanced transport; Density of trap states; FIELD-EFFECT TRANSISTORS; HIGH-ELECTRON-MOBILITY; HIGH-PERFORMANCE; CONJUGATED POLYMERS; SINGLE-CRYSTAL;
D O I
10.1016/j.orgel.2011.10.003
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
We report on charge transport and density of trap states (trap DOS) in ambipolar diketo-pyrrolopyrrole-benzothiadiazole copolymer thin-film transistors. This semiconductor possesses high electron and hole field-effect mobilities of up to 0.6 cm(2)/V-s. Temperature and gate-bias dependent field-effect mobility measurements are employed to extract the activation energies and trap DOS to understand its unique high mobility balanced ambipolar charge transport properties. The symmetry between the electron and hole transport characteristics, parameters and activation energies is remarkable. We believe that our work is the first charge transport study of an ambipolar organic/polymer based field-effect transistor with room temperature mobility higher than 0.1 cm(2)/V-s in both electrons and holes. (C) 2011 Elsevier B. V. All rights reserved.
引用
收藏
页码:136 / 141
页数:6
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