Epitaxial graphene electronic structure and transport

被引：97

作者：

de Heer, Walt A. ^{[1
]}

Berger, Claire ^{[1
,2
]}

Wu, Xiaosong ^{[1
]}

Sprinkle, Mike ^{[1
]}

Hu, Yike ^{[1
]}

Ruan, Ming ^{[1
]}

Stroscio, Joseph A. ^{[3
]}

First, Phillip N. ^{[1
]}

Haddon, Robert ^{[4
,5
]}

Piot, Benjamin ^{[6
]}

Faugeras, Clement ^{[6
]}

Potemski, Marek ^{[6
]}

Moon, Jeong-Sun ^{[7
]}

机构：

[1] Georgia Inst Technol, Sch Phys, Atlanta, GA 30332 USA

[2] Inst Neel, CNRS, F-38042 Grenoble 9, France

[3] NIST, Ctr Nanoscale Sci & Technol, Gaithersburg, MD 20899 USA

[4] Univ Calif Riverside, Dept Chem, Ctr Nanoscale Sci & Engn, Riverside, CA 92521 USA

[5] Univ Calif Riverside, Dept Chem & Environm Engn, Riverside, CA 92521 USA

[6] CNRS, LNCMI, F-38042 Grenoble 9, France

[7] HRL Labs LLC, Malibu, CA 90265 USA

来源：

JOURNAL OF PHYSICS D-APPLIED PHYSICS | 2010年 / 43卷 / 37期

基金：

美国国家科学基金会;

关键词：

FIELD-EFFECT TRANSISTORS; SILICON-CARBIDE; HETEROEPITAXIAL GRAPHITE; MOLECULAR ELECTRONICS; BILAYER GRAPHENE; FILMS; 6H-SIC(0001); STATE; GRAPHITIZATION; MORPHOLOGY;

D O I：

10.1088/0022-3727/43/37/374007

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Since its inception in 2001, the science and technology of epitaxial graphene on hexagonal silicon carbide has matured into a major international effort and is poised to become the first carbon electronics platform. A historical perspective is presented and the unique electronic properties of single and multilayered epitaxial graphenes on electronics grade silicon carbide are reviewed. Early results on transport and the field effect in Si-face grown graphene monolayers provided proof-of-principle demonstrations. Besides monolayer epitaxial graphene, attention is given to C-face grown multilayer graphene, which consists of electronically decoupled graphene sheets. Production, structure and electronic structure are reviewed. The electronic properties, interrogated using a wide variety of surface, electrical and optical probes, are discussed. An overview is given of recent developments of several device prototypes including resistance standards based on epitaxial graphene quantum Hall devices and new ultrahigh frequency analogue epitaxial graphene amplifiers.

引用

页数：13

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