Highly conductive p-type ZnTe:As grown by atmospheric metalorganic chemical vapor deposition using trimethylarsine

被引：18

作者：

Kamata, A

Yoshida, H

机构：

[1] Toshiba Corp, Kawasaki, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1996年 / 35卷 / 1B期

关键词：

ZnTe; arsenic; MOCVD; p-type; carrier concentration; trimethylarsine;

D O I：

10.1143/JJAP.35.L87

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Highly conductive p-type ZnTe was grown by atmospheric metalorganic chemical vapor deposition (MOCVD). The source materials were dimethylzinc and diisopropyltelluride. Arsenic was doped into ZnTe with trimethylarsine. The carrier concentration depended on both the growth temperature and VI/II ratio. The highest carrier concentration measured in Hall measurements was 1.3 x 10(19) cm(-3), which is the highest ever reported for MOCVD-grown ZnTe. Low-temperature photoluminescence spectra showed strong As-related bound exciton lines and donor-to-acceptor recombination lines.

引用

页码：L87 / L89

页数：3

共 6 条

[1] GROWTH OF HIGHLY DOPED P-TYPE ZNTE LAYERS ON GAAS USING A NITROGEN DC PLASMA-CELL [J].